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| 2SC5025 Silicon NPN Epitaxial Application High frequency amplifier TO-126FM Features * Excellent high frequency characteristics fT = 1.2 GHz typ * Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC ic(peak) PC PC*1 Tj Tstg Rating 30 20 3.5 0.3 0.5 1 5 150 -55 to +150 Unit V V V A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SC5025 Electrical Characteristics (Ta = 25C) Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO ICBO IEBO hFE VBE VCE(sat) fT Cob Min 20 Typ -- Max -- Unit V Test Conditions IC = 10 mA, RBE = VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA V VCE = 5 V, IC = 300 mA IC = 300 mA, IB = 60 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz VEB = 2 V, IC = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- 1.0 mA -------------------------------------------------------------------------------------- Emitter cutoff current -- -- 1.0 mA -------------------------------------------------------------------------------------- DC current transfer ratio Base to emitter voltage 40 -- 200 -------------------------------------------------------------------------------------- -- -- 1.2 -------------------------------------------------------------------------------------- Collector to emitter saturation voltage Gain bandwidth product -- -- 2.0 V -------------------------------------------------------------------------------------- -- 1.2 -- GHz -------------------------------------------------------------------------------------- Collector output capacitance -- 5.0 -- pF -------------------------------------------------------------------------------------- Input capacitance Cib -- 10 -- pF -------------------------------------------------------------------------------------- See characteristic curves of 2SC3652. 2SC5025 Maximum Collector Power Dissipation Curve 8 Collector Power Dissipation Pc (W) 6 Tc 4 2 Ta 0 50 100 150 Temperature T (C) 200 |
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